Analysis of diode recovery phenomena using transient analysis method for semiconductor devices coupled with external circuit

Relationships between peak voltage value Vp and forward current flowing interval /spl Delta/t during the diode reverse recovery process were investigated experimentally and by a device simulation technique. Vp increases with decreasing /spl Delta/t and becomes a maximum at /spl Delta/t/spl sim/1.5 /spl mu/s. This result shows that the fast switching process in invertor circuits may possibly give a high voltage stress for the diodes.