电迁移
铜
透射电子显微镜
材料科学
电流
电流密度
凝聚态物理
各向异性
电阻率和电导率
冶金
纳米技术
复合材料
光学
电气工程
物理
工程类
量子力学
作者
Chien‐Neng Liao,Kun‐Chou Chen,Wen‐Wei Wu,L. J. Chen
摘要
Atomic-scale electromigration (EM) in unpassivated copper metal lines was directly observed in ultrahigh vacuum at room temperature by transmission electron microscopy. It was found that copper atoms on a (211) crystal plane vanished directionally within half an hour when applying an electric current with a density of 2×106A∕cm2 through the tested Cu line. The EM-induced atomic migration appeared to be anisotropic, and the combination of {111} planes and ⟨110⟩ directions was suggested to be the easiest electromigration system for crystalline copper. EM-induced mass transport was also found to be responsible for the weakening (111) texture of the Cu lines after electric current stressing.
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