Enhanced photoresponse of InxMo1-xS2 (X = 0.05 and 0.1) nanosheets for PEC type photodetector

Transition metal chalcogenides (TMDCs) have great potential in the field of solid state photodetectors and photoelectrochemical (PEC) type photodetector owing to high carrier mobility and suitable energy band gap. Two dimensional MoS 2 , most intensively investigated member of TMDCs, has shown excellent photoresponsivity in the visible range owing to excitonic transition and suitable electronic structure. Herein, we demonstrate the PEC photodetector based on In x Mo 1-x S 2 nanosheets. High yield liquid phase exfoliation techniques have been employed for the synthesis of In x Mo 1-x S 2 nanosheets. In x Mo 1-x S 2 nanosheets have hexagonal lattice structure with highly crystalline behavior and X-ray diffraction confirms the doping of indium in 2H–MoS 2 . PEC type detectors show 582 μA/W and 107 μA/W photoresponsivity for In 0.05 Mo 0.95 S 2 and In 0.1 Mo 0.9 S 2 nanosheets by optimized concentration of indium. Present investigation advocates the significant development in the field of opto-electronics and photoelectrochemical cells for generation clean energy. • Vertical alignment of In X Mo 1-X S 2 (X = 0.05 and 0.1) nanosheets is observed electrophoretically deposited film. • PEC type photodetector shows the fast-switching ability. • Photoresponsivity of 582 μA/W and IPCE of 0.58 × 10 −3 and 0.76 × 10 −3 under 670 nm are realised.