Resistive Random-Access Memories Using Quasi-2d Halide Perovskites for Wafer-Scale Reliable Switching Behaviors

In this study, we propose the (PEA)2MA3Pb4I13, a quasi-two-dimensional (2D) halide perovskite, in the realm of resistive switching memory devices. A quasi-2D perovskite film, (PEA)2MA3Pb4I13, with a thickness measuring 450 nm, has been effectively fabricated on a silicon substrate coated with platinum through an all-solution process conducted at low temperatures. The constructed resistive switching memory devices, incorporating an Ag/(PEA)2MA3Pb4I13/Pt/Ti/SiO2/Si configuration, display dependable and consistent bipolar switching attributes. The device showed an ultra-low operating voltage of less than +0.1 V, an impressive high ON/OFF ratio exceeding 108, reversible resistive switching via pulse voltage operation, and the capability for multilevel data storage. Furthermore, we fabricated resistive switching of (PEA)2MA3Pb4I13 thin films at the 4-inch wafer. The switching characteristics observed throughout the 4-inch wafer closely resembled those seen in smaller-scale devices. This set of findings robustly supports the premise that (PEA)2MA3Pb4I13 is adeptly compatible with non-volatile memory applications. Conclusively, this research paves the way in elucidating the attributes of quasi-2D halide perovskites pertinent to high ON/OFF ratios and low-voltage resistive switching. Moreover, it casts a spotlight on their immense potential in the development of low-energy-consuming nonvolatile memory devices that can be integrated into future computing systems.