Supramolecular Memristor Based on Bistable [2]Catenanes: Toward High‐Density and Non‐Volatile Memory Devices

Abstract The ever‐increasing demand for data storage and neuromorphic computing calls for innovative, high‐density solutions, such as resistive random‐access memory (RRAM). However, the integration of resistive switching and rectification at the nanoscale remains a formidable challenge. In this study, we introduce a bistable [2]catenane‐based supramolecular junction that simultaneously functions as a resistive switch and a diode. All supramolecular junctions are highly stable and reproducible over thousands of resistive switching cycles, because the nano‐confinement of two mechanically interlocked rings can stabilize the radical states of pyridinium moieties under ambient conditions. The successful realization of supramolecular junctions in functionality with a thickness of approximately 2 nm presents a promising avenue for the development of molecule‐scale based RRAM for a better solution to high density and energy efficiency.