碳纳米管
数码产品
纳米技术
晶体管
材料科学
纳米管
碳纳米管场效应晶体管
纳米电子学
硅
纳米
场效应晶体管
光电子学
电气工程
工程类
电压
复合材料
作者
Aaron D. Franklin,Mark C. Hersam,H.‐S. Philip Wong
出处
期刊:Science
[American Association for the Advancement of Science (AAAS)]
日期:2022-11-17
卷期号:378 (6621): 726-732
被引量:60
标识
DOI:10.1126/science.abp8278
摘要
Semiconducting carbon nanotubes are robust molecules with nanometer-scale diameters that can be used in field-effect transistors, from larger thin-film implementation to devices that work in conjunction with silicon electronics, and can potentially be used as a platform for high-performance digital electronics as well as radio-frequency and sensing applications. Recent progress in the materials, devices, and technologies related to carbon nanotube transistors is briefly reviewed. Emphasis is placed on the most broadly impactful advancements that have evolved from single-nanotube devices to implementations with aligned nanotubes and even nanotube thin films. There are obstacles that remain to be addressed, including material synthesis and processing control, device structure design and transport considerations, and further integration demonstrations with improved reproducibility and reliability; however, the integration of more than 10,000 devices in single functional chips has already been realized.
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