Air Induced Formation of Cs3Bi2Br9/Cs3BiBr6 Bulk Heterojunction and Its Dual‐band Photodetection Abilities for Light Communication (Adv. Funct. Mater. 46/2022)

Bulk Heterojunctions In article number 2206151, Xiaosheng Fang, Zhifeng Shi and co-workers develop a novel air induced formation of Cs3Bi2Br9/Cs3BiBr6 bulk heterojunction. Theoretical and experimental characterization suggest that Cs3Bi2Br9 exhibits a more stable structure in air. The bulk heterojunction exhibits dual-band photodetection capabilities with a UV main band (360 nm) peak responsivity of 5.6 mA/W and a blue sub-band (450 nm) peak responsivity of 0.6 mA/W at 2 V, demonstrating great application prospects in light communication.