光电探测器
光电子学
光电流
材料科学
二极管
异质结
范德瓦尔斯力
反向二极管
肖特基二极管
物理
分子
量子力学
作者
Xuhong Li,Xiaohong Chen,Wenjie Deng,Songyu Li,Feihong Chu,Congya You,Jingjie Li,Fa-Min Liu,Yongzhe Zhang
标识
DOI:10.1002/admi.202201644
摘要
Abstract Van der Waals (vdW) heterojunctions composed of 2D layered materials exhibit novel physical phenomena that can power a range of electronic and photonic applications. Here, the first demonstration of the light switchable mechanism between the rectifier diode and Esaki diode in SnS 2 /WSe 2 ‐black phosphorus (BP) vdW heterojunctions is presented. In this design, the photogating effect of WSe 2 ‐BP junction is employed as the switch toggle between rectifier diode and Esaki diode. Based on this light switchable mechanism, a super‐linear photocurrent‐power dependence is observed and a high‐performance photodetector with high detectivity (5.1 × 10 11 Jones) and rapid response speed (<112 us) is obtained. A feasible strategy for a well‐balanced photodetector with high detectivity and response speed in the vdW heterojunction is provided.
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