钙钛矿(结构)
量子产额
光致发光
量子点
光电子学
二极管
发光二极管
荧光粉
材料科学
结晶度
发光效率
光化学
纳米技术
化学
荧光
结晶学
光学
图层(电子)
物理
复合材料
作者
Zhaoju Gao,Xiuwen Shao,Zhijing Huang,Qingyu Xie,Yupeng Ying,Hao Lin,Jia Wang,Xiaosheng Tang,Weiwei Chen,Wei Pei,Yusong Tu,Yongfeng Liu
摘要
All-inorganic perovskite quantum dots (PeQDs) have aroused great research interest in white light-emitting diodes (WLED) due to their excellent optoelectronic properties, but the poor stability, caused by dynamically binding long-chain capping ligands, hinders their future practical applications. To address this issue, here, we exploit short-chain butyric acid (BA) to replace long-chain oleic acid (OA) as capping ligand of CsPbX3 PeQDs by a hot-injection method. The addition of BA not only makes the morphology of CsPbBr3 PeQDs uniform and improves the crystallinity but also effectively suppresses nonradiative recombination, achieving a near unit photoluminescence quantum yield of 96%. The BA capped CsPbBr3 PeQDs exhibit high stability up to 180 d stored in ambient environment and also significantly improved resistance against polar solvent, ultra-violet lamp irradiation, and heat, which is rationalized by the strong binding capacity and shortened distance of BA to the PeQDs through ab initio calculations. Furthermore, by combining green-emission CsPbBr3 and red-emission CsPbBr0.8I2.2 PeQDs with blue GaN chip, we achieved WLEDs with excellent luminous properties, showing their great potential in practical application of wide-color-gamut display and lighting.
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