DFT calculations for temperature stable quantum capacitance of VS2 based electrodes for supercapacitors

电容 超级电容器 量子电容 电极 量子 材料科学 光电子学 凝聚态物理 纳米技术 物理 量子力学
作者
Ashish Yadav,N S Shreevathsa,Rohit Singh,Partha Pratim Das,Vivek Garg,Sushil Pandey
出处
期刊:IEEE Transactions on Nanotechnology [Institute of Electrical and Electronics Engineers]
卷期号:: 1-7
标识
DOI:10.1109/tnano.2024.3358017
摘要

Using density functional theory calculations, we demonstrate the quantum capacitance of the VS 2 electrode which can be improved by doping with non-metallic elements such as nitrogen (N), phosphorus (P), and arsenic (As) atoms. The radius, charge, and morphology of these non-metallic elements help to improve the performance of VS 2 material as electrodes of supercapacitors. The As-doped VS 2 monolayer demonstrated the maximum quantum capacitance of 31.2369 μF/cm 2 at 300 K. At 1200 K, quantum capacitance reaches the value of 25.2149 μF/cm 2 , showing the inconsiderable change in value for this wide range of temperature variation. Additionally, the other important properties of undoped and doped VS 2 monolayers such as density of states, energy band structure, electrical conductivity, thermal conductivity, and the Seebeck coefficient were also computed and examined in detail. The band structure of the P and As-doped VS 2 monolayers showed a metallic nature, which is suitable for electrode application. In the case of As-doped VS 2 material, a high figure of merit of 3.536 was observed by using DFT-D2 calculations, due to the large Seebeck coefficient and significant electrical conductivity. Our findings will be helpful in further exploring the suitability of VS 2 monolayers as electrodes of supercapacitors.
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