纳米尺度
GSM演进的增强数据速率
自旋(空气动力学)
材料科学
国家(计算机科学)
纳米技术
凝聚态物理
化学物理
物理
计算机科学
热力学
电信
算法
作者
Haoran Li,Bei Zhang,Yi‐Feng Qiu
标识
DOI:10.1142/s0217979225500912
摘要
Edge state and interfacial design are efficient strategies to regulate the spin-transport properties of nanoscale devices. Spin-polarized transport properties of VC 2 nanoribbon device and poly-(terphenylene-butadiynylene) PTB molecular junctions are studied by using density functional theory (DFT) and non-equilibrium Green function. Results show good self-selected filtering properties for spin-up current are highly suppressed, where there is only spin-down current that can propagate through the scattering region of such a nanoribbon device. What needs to be pointed out is that spin-down current exhibits an obvious negative differential resistance effect. Current and transmission spectrum peaks are significantly weakened, and the negative differential resistance effect disappears after a PTB molecule is embedded between two semi-infinite VC 2 nanoribbon electrodes. This work provides a basis for improving the design and method of spintronic devices.
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