Magnetron sputtering of Fe onto GaAs substrates: Energetic bombardment effects

Fe films were deposited on (100) GaAs substrates by magnetron sputtering. Bombardment of the films during growth by energetic particles from the plasma had a significant impact on film properties including resistivity, crystallographic orientation, and stress. Preferred orientation of the (200) Fe planes parallel to the substrate surface was observed over a wide range of deposition conditions. The (200) Fe rocking curve widths of these films compare favorably with those of films deposited using molecular beam epitaxy, and the resistivities were comparable to that of bulk Fe. Positions directly in front of the cathode as well as low cathode power appear to favor the formation of (200) Fe texture, however, the rocking curve width and lattice parameter are relatively independent of substrate position and cathode power.