A Theoretical and Experimental Comparison of 4H- and 6H-SiC MSM UV Photodetectors

材料科学 响应度 光电探测器 光电流 暗电流 光电子学 电极 波长 灵敏度(控制系统) 制作 截止频率 碳化硅 电子工程 复合材料 物理化学 病理 化学 工程类 替代医学 医学
作者
Jang Kwon Lim,Ludwig Östlund,Qin Wang,Wlodek Kaplan,Sergey A. Reshanov,Adolf Schöner,Mietek Bakowski,Hans Peter Nee
出处
期刊:Materials Science Forum 卷期号:717-720: 1207-1210 被引量:2
标识
DOI:10.4028/www.scientific.net/msf.717-720.1207
摘要

This paper reports on fabrication and modeling of 4H- and 6H-SiC metal-semiconductor-metal (MSM) photodetectors (PDs). MSM PDs have been fabricated on 4H-SiC and 6H-SiC epitaxial layers, and their performance analyzed by MEDICI simulation and measurements. The simulations were also used to optimize the sensitivity by varying the width and spacing of the interdigitated electrodes. The fabricated PDs with 2 µm wide metal electrodes and 3 µm spacing between the electrodes exhibited, under UV illumination, a peak current to dark current ratio of 105 and 104 in 4H-SiC and 6H-SiC, respectively. The measured spectral responsivity of 6H-SiC PDs was higher compared to that of 4H-SiC PDs, with a cutoff at 407 nm compared to 384 nm in 4H-SiC PDs. Also the peak responsivity occurred at a shorter wavelength in 6H material. A high rejection ratio between the photocurrent and dark current was found in both cases. These experimental results were in agreement with simulation.
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