Recombination Coefficients and Spectral Emissivity of Silicon Carbide-Based Thermal Protection Materials

The method for determining the recombination coefficients for ceramic materials in air plasma and pure oxygen plasma is described. Additionally, a new method lor the in situ determination of the spectral emissivity of high-temperature ceramic materials is presented. Values of the recombination coefficients for considered materials, resulting from the described methodology, are given at temperatures between 1483 and 1851 K and pressures between 356 and 950 Pa and compared with literature. Values of the spectral emissivities of the investigated materials are presented in a temperature range from about 1200 to 1820 K and compared with values obtained by other authors. Obtained results will be used for the development of catalytic sensors in the frame of the European reentry program EXPERT.