材料科学
电容器
原子层沉积
电介质
高-κ电介质
铪
无定形固体
电容
X射线光电子能谱
图层(电子)
光电子学
栅极电介质
堆栈(抽象数据类型)
等效氧化层厚度
基质(水族馆)
分析化学(期刊)
透射电子显微镜
氧化物
栅氧化层
纳米技术
电气工程
化学
电压
锆
结晶学
核磁共振
物理
地质学
电极
程序设计语言
冶金
色谱法
工程类
计算机科学
海洋学
晶体管
物理化学
作者
Young‐Bae Kim,Moonsoo Kang,Tae‐Ho Lee,Jinho Ahn,Duck‐Kyun Choi
出处
期刊:Journal of vacuum science & technology
[American Institute of Physics]
日期:2003-09-01
卷期号:21 (5): 2029-2033
被引量:13
摘要
Hafnium–oxide films deposited on a thermally grown SiON film and a hydrogen-terminated Si bare substrate by an atomic-layer-deposition technique have been investigated. Capacitance–voltage measurements show equivalent-oxide thicknesses of about 1.79 nm for a 4.2 nm HfO2/SiON stack capacitor and of about 1.84 nm for a 5.2 nm HfO2 single-layer capacitor. These measurements also show a dielectric constant of 18.1 for the HfO2 in the stack capacitor and of 11.2 for the HfO2 single-layer capacitor. The hysteresis of the stack capacitors is measured to be less than 40 mV, whereas that of the single-layer capacitor is 206 mV. Transmission-electron microscopy (TEM) and x-ray photoelectron spectroscopy indicated that the dielectric films are amorphous structure, rather than crystalline or phase-separated silicide and oxide structures. TEM showed that the interface of the stack capacitor can be stable to at least 850 °C.
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