材料科学
二硒化钨
薄膜晶体管
石墨烯
晶体管
光电子学
纳米片
纳米技术
半导体
氮化硼
分离器(采油)
薄膜
电气工程
电压
图层(电子)
化学
物理
工程类
催化作用
过渡金属
热力学
生物化学
作者
Adam G. Kelly,Toby Hallam,Claudia Backes,Andrew Harvey,Amir Sajad Esmaeily,Ian Godwin,João Coelho,Valeria Nicolosi,Jannika Lauth,Aditya Kulkarni,Sachin Kinge,Laurens D. A. Siebbeles,Georg S. Duesberg,Jonathan N. Coleman
出处
期刊:Science
[American Association for the Advancement of Science (AAAS)]
日期:2017-04-07
卷期号:356 (6333): 69-73
被引量:386
标识
DOI:10.1126/science.aal4062
摘要
Printing nanosheet-network transistors Two-dimensional (2D) materials such as graphene and metal chalcogenides such as tungsten diselenide (WSe2) are attractive for use in low-cost thin-film transistors (TFTs) because they have high charge-carrier mobility. Kelly et al. printed TFTs from networks of exfoliated dispersions of 2D materials with graphene contacts, WSe 2 as the semiconductor, and a boron nitride separator. Electrolytic gating with ionic liquids enabled higher operating currents than achieved with comparable organic TFTs. Science , this issue p. 69
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