钻石
半导体
氢
费米能级
凝聚态物理
材料科学
带隙
航程(航空)
原子物理学
化学
物理
光电子学
电子
冶金
量子力学
复合材料
有机化学
作者
John L. Lyons,Chris G. Van de Walle
标识
DOI:10.1088/0953-8984/28/6/06lt01
摘要
In virtually all semiconductors and insulators, hydrogen interstitials () act as negative-U centers, implying that hydrogen is never stable in the neutral charge state. Using hybrid density functional calculations, we find a different behavior for in diamond and cubic BN. In diamond, is a very strong positive-U center, and the charge state is stable over a Fermi-level range of more than 2 eV. In cubic BN, a III–V compound similar to diamond, we also find positive-U behavior, though over a much smaller Fermi-level range. These results highlight the unique behavior of in these covalent wide-band-gap semiconductors.
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