光电子学
激光器
光子学
材料科学
硅光子学
混合硅激光器
薄脆饼
量子点
连续波
量子点激光器
硅
光子集成电路
绝缘体上的硅
光学
半导体激光器理论
物理
半导体
作者
Siming Chen,Wei Li,Jiang Wu,Qi Jiang,Mingchu Tang,Samuel Shutts,Stella N. Elliott,A. Sobiesierski,A.J. Seeds,I M Ross,Peter M. Smowton,Huiyun Liu
出处
期刊:Nature Photonics
[Springer Nature]
日期:2016-03-07
卷期号:10 (5): 307-311
被引量:695
标识
DOI:10.1038/nphoton.2016.21
摘要
The growth of III–V quantum dot lasers directly onto a silicon substrate aids photonics and electronics integration. Reliable, efficient electrically pumped silicon-based lasers would enable full integration of photonic and electronic circuits, but have previously only been realized by wafer bonding. Here, we demonstrate continuous-wave InAs/GaAs quantum dot lasers directly grown on silicon substrates with a low threshold current density of 62.5 A cm–2, a room-temperature output power exceeding 105 mW and operation up to 120 °C. Over 3,100 h of continuous-wave operating data have been collected, giving an extrapolated mean time to failure of over 100,158 h. The realization of high-performance quantum dot lasers on silicon is due to the achievement of a low density of threading dislocations on the order of 105 cm−2 in the III–V epilayers by combining a nucleation layer and dislocation filter layers with in situ thermal annealing. These results are a major advance towards reliable and cost-effective silicon-based photonic–electronic integration.
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