High-Performance Depletion-Mode Multiple-Strip ZnO-Based Fin Field-Effect Transistors

To enhance the performances of the depletion-mode zinc-oxide (ZnO)-based MOSFETs, the multiple-channel and multiple-gate fin structures were deposited using the magnetron sputter system and patterned using the laser interference photolithography technique. The multiple-channel fin structure possessed the additional sidewall depletion width to enhance the gate controllability. The multiple-gate structure had a shorter source-gate distance and a shorter gate length between two gates to promote the gate operating performances. Therefore, the drain-source saturation current of the multiple-strip ZnO-based fin MOSFETs operated at a drain-source voltage of 10 V and a gate-source voltage of 0 V was improved to 13.7 mA/mm in comparison with 11.5 mA/mm of the conventional single-channel and single-gate ZnO-based MOSFETs. Furthermore, the corresponding maximum transconductance was enhanced from 4.1 to 6.9 mS/mm.