Three elements for the preparation of vertical graphene by RF-PECVD method

Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF-PECVD) is one of the high-efficiency technologies for controlling the preparation of regular vertical graphene and has gained increased attention in recent years. Combined with the current development, the three elements of carbon source/carrier gas/substrate are reviewed for the preparation of vertical graphene by RF-PECVD. The selection and control of carbon source/carrier gas (reactive gas/protective gas/doping gas), the conditions required for preparation, and different growth substrates used by RF-PECVD technology are summarized to provide guidance for further screening of preparation elements. Results reveal the effects of preparation elements on the final application direction of vertical graphene and the important influence of control parameters in various application fields on the final performance of the vertical graphene material. In addition, the growth mechanism of vertical graphene is discussed under the premise of the existing RF-PECVD technology. The challenges and future perspectives are also highlighted to promote the preparation of vertical graphene by radio frequency method.