Ultrahigh‐Performance Optoelectronic Skin Based on Intrinsically Stretchable Perovskite‐Polymer Heterojunction Transistors

The optoelectronic skin is acknowledged as the world's current cutting-edge technology in the fields of wearable healthcare monitoring, soft robotics, artificial retinas, and so on. However, the difficulty in preparing stretchable photosensitive polymers and the high-crystallization nature of most reported photosensitive materials (such as perovskites) severely restrict the development of skin-like optoelectronic devices. Herein, a surface energy-induced self-assembly methodology is proposed to form easily transferrable and flexible perovskite quantum dot (PQD) films with a worm-like morphology. Furthermore, intrinsically stretchable phototransistors (ISTPTs) are fabricated based on a stretchable photosensitive layer heterojunction consisting of worm-like PQD films and hybrid polymer semiconductors. The obtained ISTPTs display highly sensitive response to high-energy photons of X-ray (with a detection limit of 79 nGy s^-1 , that is 560 times lower than commercial medical chest X-ray diagnosis) and ultraviolet (with photosensitivity of 5 × 10⁶ and detectable light intensity of 50 nW cm^-2 among the highest performance of reported photodetectors). In addition, these ISTPTs demonstrate desirable e-skin characteristics with high strain tolerance, high sensing specificity, high optical transparency, and good skin conformability. The surface energy-induced self-assembly methodology for the preparation of ISTPTs is a critical demonstration to enable low-cost and high-performance optoelectronic skins.