High-speed electro-optic modulator based on silicon nitride loaded lithium niobate on an insulator platform

Electro-optic (EO) modulators, which convert signals from the electrical to optical domain plays a key role in modern optical communication systems. Lithium niobate on insulator (LNOI) technology has emerged as a competitive solution to realize high-performance integrated EO modulators. In this Letter, we design and experimentally demonstrate a Mach–Zehnder interferometer-based modulator on a silicon nitride loaded LNOI platform, which not only takes full advantage of the excellent EO effect of L i N b O 3 , but also avoids the direct etching of L i N b O 3 thin film. The measured half-wave voltage length product of the fabricated modulator is 2.24 V·cm, and the extinction ratio is ∼ 20 d B . Moreover, the 3 dB EO bandwidth is ∼ 30 G H z , while the modulated data rate for on–off key signals can reach up to 80 Gbps.