Effect of oxidation temperature on the inhomogeneity of chemical composition and density in nanometric SiO2 films grown on 4H-SiC

State-of-the-art SIMS, XRR and AFM have been used to determine the effect of oxidation temperature on the inhomogeneity of chemical composition and density in nanometric SiO₂ films grown on n-type 4H-SiC by thermal oxidation in dry oxygen.