We report studies of noise properties of carbon nanotube (CNT) networks-based devices used for the terahertz detectors. Low-frequency noise characteristics of CNTs as a function of temperature, UV illumination, and back-gate voltages were examined. Our results demonstrated the existence of at least two important resistance components of nanotubes rather than generally accepted dominant tube-to-tube junction resistance. We showed that noise spectroscopy can be employed to probe the structural quality of nanotube networks. Measurements as a function of back gate voltages revealed the existence of generation-recombination noise, related to deep tarps, which play a significant role in the performances of CNT networks-based terahertz detectors.