三角积分调变
闪烁噪声
物理
过采样
带宽(计算)
抖动
电子工程
噪声整形
放大器
噪声系数
电气工程
计算机科学
电信
工程类
CMOS芯片
作者
Raviteja Theertham,Prasanth Koottala,Sujith Billa,Shanthi Pavan
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2020-09-01
卷期号:55 (9): 2429-2442
被引量:14
标识
DOI:10.1109/jssc.2020.2979454
摘要
We present design considerations for CTΔΣMs that attempt to achieve high resolution (16+ bits) over a wide bandwidth (>200 kHz), resulting in a low in-band noise spectral density. The main challenges in such designs are parasitic resistance in the reference path, inter-symbol interference (ISI) in the feedback-digital-to-analog converter (DAC) waveform, and flicker noise of the input operational transconductance amplifier (OTA). We introduce the virtual-ground-switched resistor DAC as a way to achieve low distortion by addressing parasitic resistance in the reference path and reducing the effects of ISI. Flicker noise is reduced by chopping the first stage of the input OTA. Chopping artifacts and clock jitter sensitivity are reduced by using a three-stage OTA and finite impulse response (FIR) feedback. These techniques are applied to the design of a 250 kHz bandwidth CTAΣM targeting 108 dB signal-to-noise-and-distortion-ratio (SNDR) in a 180 nm CMOS process. The fabricated prototype, which operates at 32 MS/s, achieves 105.3/108.1 dB SNDR/signal-to-noise-ratio (SNR) and consumes 24 mW. The Schreier SNDR figure of merit (FoM) is 175.5 dB.
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