响应度
光电子学
材料科学
光电二极管
硅
红外线的
光电探测器
石墨烯
可见光谱
量子点
基质(水族馆)
光学
纳米技术
物理
海洋学
地质学
作者
Xin Tang,Menglu Chen,Ananth Kamath,Matthew M. Ackerman,Philippe Guyot‐Sionnest
出处
期刊:ACS Photonics
[American Chemical Society]
日期:2020-04-01
卷期号:7 (5): 1117-1121
被引量:47
标识
DOI:10.1021/acsphotonics.0c00247
摘要
Integration of infrared detectors with current silicon-based imagers would not only extend their spectral sensing range, but also enables numerous applications including thermal imaging, machine vision, and spectrometers. Here, we report the development of a dual-channel photodetector by depositing a colloidal quantum dot (CQDs) infrared photodiode onto a graphene/p-silicon Schottky junction to provide simultaneous visible and infrared photoresponse channels. The HgTe photodiode is patterned into a semitransparent mesh structure with varying fill factors so that the visible light reaches the silicon substrate. The graphene/silicon Schottky junction has a responsivity of ∼0.9 A/W in the visible and the infrared CQDs photodiode has a detectivity of ∼5 × 109 Jones at 2.4 μm for a filling factor of 0.1.
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