High-Performance Broadband Photodetector Based on Monolayer MoS 2 Hybridized with Environment-Friendly CuInSe 2 Quantum Dots

Monolayer MoS 2, a direct bandgap transition metal dichalcogenide (TMD), has attracted worldwide attention in electronics and optoelectronics. However, the performance of photodetectors based on monolayer MoS 2 is restricted to a weak optical absorption, narrow absorption range, and persistent photoconductance. Herein, benefiting from an easy solution process, high light absorption coefficient, and wide absorption range, environment-friendly CuInSe 2 quantum dots (QDs) are hybridized with monolayer MoS 2 for high-performance broadband photodetectors. Owing to the favorable type-II energy band alignment of MoS 2 /CuInSe 2 -QDs, the hybrid photodetector exhibits a broadband photoresponse from the ultraviolet to near-infrared region, with an ultrahigh photoresponsivity of 74.8 A/W at 1064 nm, and compared with those of the pristine MoS 2 device, the photoresponsivity and specific detectivity in the ultraviolet–visible region were enhanced by about 30 and 20 times, respectively. Furthermore, the formed depletion region at the MoS 2 /CuInSe 2 -QDs interface can significantly increase the photoresponse speed, and the accumulated holes in the QD side induce a strong photogating effect to improve the photoresponsive characteristics of the hybrid photodetector. Our work opens up opportunities for fabricating high-performance monolayer TMD-based broadband photodetectors.