重组
钙钛矿(结构)
卤化物
无辐射复合
离子
开路电压
材料科学
光电子学
带隙
辐射传输
原子物理学
存水弯(水管)
电压
化学
物理
光学
结晶学
气象学
生物化学
有机化学
无机化学
基因
量子力学
作者
Jialin Dang,Zhi Yang,Wei Guo,Jinjuan Dou,Hui Wang,Minqiang Wang
标识
DOI:10.1021/acs.jpclett.0c02232
摘要
Multiple-cation lead mixed-halide perovskites (MLMPs) with tunable band gaps have been demonstrated as ideal candidates to achieve perovskite solar cells with high efficiencies. It is well-known that a large open-circuit voltage (VOC) loss caused by nonradiative recombination still limits the approach to the Shockley–Queisser limit. However, there are few comprehensive contributions regarding the origin and pathway of nonradiative recombination in n-i-p structured MLMPs. Here, we compare the performance of MLMPs containing different halides and analyze the energy loss and interface trap-assisted nonradiative recombination characterizations. It is found that Br-containing devices with a lower interface trap density of 3.2 × 1013 cm–2 obtain a high VOC of 1.12 V, a small energy loss of 0.02 eV, radiative recombination current density of 8.05 × 10–21 A m–2, and total recombination current density of 22.16 mA cm–2. This work provides an opportunity to understand the device physics and reveals the nature of nonradiative recombination based on experiment and simulation.
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