Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/$R_{\text{on,sp}}$ of up to 0.95 GW/cm2

We report the realization of field-plated vertical Ga ₂ O ₃ trench Schottky barrier diodes (SBDs). The trench SBDs show significantly lower leakage current than regular SBDs. With employment of field plate, a breakdown voltage (BV) of 2.89 kV is achieved, which is ~500 V higher than those without field plate. Trench sidewall depletion is observed, and the average depletion width is extracted using an analytical model. The trench SBDs have a differential specific on-resistance(Ron,sp) of 10.5(8.8) mQ ·cm ² from DC (pulsed) measurements, which leads to a Baliga's figureof-merit (BV ² /R _on,sp ) of 0.80 (0.95) GW/cm ² - the highest among Ga ₂ O ₃ power devices to date.