兴奋剂
氮气
硼
Crystal(编程语言)
材料科学
钻石
堆积
铝
叠加断层
电阻率和电导率
分析化学(期刊)
凝聚态物理
化学
光电子学
复合材料
电气工程
物理
工程类
有机化学
程序设计语言
色谱法
计算机科学
作者
Hiromasa Suo,Kazuma Eto,T. Ise,Yuichiro Tokuda,Hiroshi Osawa,Hidekazu Tsuchida,Tomohisa Kato,Hajime Okumura
标识
DOI:10.1016/j.jcrysgro.2016.12.055
摘要
The growth of n-type 4H-SiC crystals has been performed by physical vapor transport (PVT) growth method, with nitrogen and boron (N-B) co-doping. It was revealed that, in the growth of 4H-SiC with N-B co-doping, the generation of double Shockley-type stacking faults (DSSFs) was suppressed, as in the case of the nitrogen and aluminum co-doping. The resistivity of the N-B co-doped 4H-SiC was as low as 5.5 mΩcm. In addition, we investigated the expansion velocities of DSSFs, which were intentionally caused by indention of crystal surfaces with a diamond indenter, while the crystals were annealed for 2 h at 1000 °C. The DSSF expansion velocities of the N-B co-doped crystals were found to be lower than the velocities of nitrogen doped crystals. The difference in expansion velocities is discussed in terms of the quantum well action model.
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