Review of Semiconductor Flash Memory Devices for Material and Process Issues (Adv. Mater. 43/2023)

Advanced MaterialsVolume 35, Issue 43 2370310 FrontispieceFree Access Review of Semiconductor Flash Memory Devices for Material and Process Issues (Adv. Mater. 43/2023) Seung Soo Kim, Seung Soo Kim Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826 Republic of Korea Samsung Electronics, Hwaseong, Gyeonggi-do, 18448 Republic of KoreaSearch for more papers by this authorSoo Kyeom Yong, Soo Kyeom Yong Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826 Republic of Korea Samsung Electronics, Hwaseong, Gyeonggi-do, 18448 Republic of KoreaSearch for more papers by this authorWhayoung Kim, Whayoung Kim Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826 Republic of Korea SK Hynix Inc., Icheon, Gyeonggi-do, 17336 Republic of KoreaSearch for more papers by this authorSukin Kang, Sukin Kang Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826 Republic of KoreaSearch for more papers by this authorHyeon Woo Park, Hyeon Woo Park Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826 Republic of KoreaSearch for more papers by this authorKyung Jean Yoon, Kyung Jean Yoon Data Platforms Group, Intel, Santa Clara, CA, 95054 USASearch for more papers by this authorDong Sun Sheen, Dong Sun Sheen SK Hynix Inc., Icheon, Gyeonggi-do, 17336 Republic of KoreaSearch for more papers by this authorSeho Lee, Seho Lee SK Hynix Inc., Icheon, Gyeonggi-do, 17336 Republic of KoreaSearch for more papers by this authorCheol Seong Hwang, Cheol Seong Hwang Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826 Republic of KoreaSearch for more papers by this author Seung Soo Kim, Seung Soo Kim Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826 Republic of Korea Samsung Electronics, Hwaseong, Gyeonggi-do, 18448 Republic of KoreaSearch for more papers by this authorSoo Kyeom Yong, Soo Kyeom Yong Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826 Republic of Korea Samsung Electronics, Hwaseong, Gyeonggi-do, 18448 Republic of KoreaSearch for more papers by this authorWhayoung Kim, Whayoung Kim Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826 Republic of Korea SK Hynix Inc., Icheon, Gyeonggi-do, 17336 Republic of KoreaSearch for more papers by this authorSukin Kang, Sukin Kang Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826 Republic of KoreaSearch for more papers by this authorHyeon Woo Park, Hyeon Woo Park Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826 Republic of KoreaSearch for more papers by this authorKyung Jean Yoon, Kyung Jean Yoon Data Platforms Group, Intel, Santa Clara, CA, 95054 USASearch for more papers by this authorDong Sun Sheen, Dong Sun Sheen SK Hynix Inc., Icheon, Gyeonggi-do, 17336 Republic of KoreaSearch for more papers by this authorSeho Lee, Seho Lee SK Hynix Inc., Icheon, Gyeonggi-do, 17336 Republic of KoreaSearch for more papers by this authorCheol Seong Hwang, Cheol Seong Hwang Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826 Republic of KoreaSearch for more papers by this author First published: 26 October 2023 https://doi.org/10.1002/adma.202370310AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Graphical Abstract Flash Memory Devices In article number 2200659, Seung Soo Kim, Cheol Seong Hwang, and co-workers review the current status and prospects of semiconductor flash memory devices. They also describe the critical challenges for the materials, circuit architecture, fabrication processes, and programming techniques. Volume35, Issue43Special Issue:University–Industry Research Collaborations in South KoreaOctober 26, 20232370310 RelatedInformation