电导率
接受者
材料科学
蓝宝石
电阻率和电导率
活化能
带隙
金属有机气相外延
兴奋剂
基质(水族馆)
化学气相沉积
光电子学
半导体
宽禁带半导体
分析化学(期刊)
外延
化学
纳米技术
凝聚态物理
图层(电子)
光学
物理化学
激光器
地质学
工程类
物理
电气工程
海洋学
色谱法
作者
Zeyu Chi,Corinne Sartel,Y. Zheng,Sushrut Modak,Leonid Chernyak,Christian M. Schaefer,Jessica Padilla,J. Santiso,A. Ruzin,Anne-Marie Gonçalvès,Jürgen von Bardeleben,Gérard Guillot,Yves Dumont,A. Pérez‐Tomás,E. Chikoidze
标识
DOI:10.1016/j.jallcom.2023.172454
摘要
The room temperature hole conductivity of the ultra-wide bandgap semiconductor β-Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type β-Ga2O3 thin films grown on r-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) exhibit ρ = 5 × 104 Ω·cm resistivity at room temperature. A low activation energy of conductivity as Ea2 = 170 ± 2 meV was determined, associated to the VO++−VGa−native acceptor defect complex. Further, taking advantage of cation (Zn) doping, the conductivity of Ga2O3:Zn film was remarkably increased by three orders of magnitude, showing a long-time stable room-temperature hole conductivity with the conductivity activation energy of around 86 meV. VO++−ZnGa− defect complex has been proposed as a corresponding shallow acceptor.
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