神经形态工程学
记忆电阻器
计算机科学
材料科学
电阻随机存取存储器
重置(财务)
电导
交叉口(航空)
光电子学
电压
电子工程
物理
电气工程
人工神经网络
工程类
人工智能
经济
航空航天工程
金融经济学
凝聚态物理
作者
Li Jiang,Yaoyao Jin,Yifan Zhao,Jiahao Meng,Jun Zhang,Xin Chen,Xinjiang Wu,Yongyue Xiao,Zipei Tao,Bei Jiang,Xin Wen,Cong Ye
标识
DOI:10.1002/apxr.202200086
摘要
Abstract New computing‐in‐memory architecture based on memristors can achieve in situ storage and computing of data, which greatly improves the computing efficiency of the hardware system. Here, a reliable bilayer structured TaO x /Al 2 O 3 memristor with a 2 nm Al 2 O 3 insertion layer is demonstrated. This device exhibits stable and gradual switching behavior with a low set/reset voltage (0.61 V/−0.49 V) and multilevel conductance characteristics. It is further indicated that the device has a larger ON/Off ratio (≈148×) and better nonlinearity of conductance modulation by inserting an Al 2 O 3 layer. Various forms of synaptic plasticity are mimicked, such as long‐term potentiation/depression (LTP/LTD), paired‐pulse facilitation (PPF), and spike‐timing‐dependent plasticity (STDP). Based on the quasi‐linear conductance modulation characteristics, excellent classification accuracy (90.4%) is achieved for the applications of handwritten digit recognition. Moreover, the logic operations (intersection, union, and complement) are implemented on a 3 × 5 memristor array, which shows an efficient way to design versatile and reliable devices and provides a novel idea for neuromorphic computing and in‐memory logic operation.
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