期刊:Journal of materials chemistry. A, Materials for energy and sustainability [The Royal Society of Chemistry] 日期:2022-01-01卷期号:10 (41): 22007-22015被引量:7
标识
DOI:10.1039/d2ta04540k
摘要
Vacancy-modified few-layered GaN crystal as an advanced electrode for IL-based SC devices, which is applied to high-temperature energy storage field for the first time. And the device exhibits superior energy storage capability at 150 °C.