Investigation on Transportation Mechanisms of InSnO/ZnO Heterojunction Transistors

We fabricate the InSnO/ZnO (ITO/ZnO) heterojunction transistors and single-channel ITO, ZnO transistors, and investigate transportation mechanisms of the ITO/ZnO heterojunction transistors by technology computer aided design (TCAD) simulation. A quasi-two-dimensional electron gas is formed at the ITO/ZnO heterojunction interface. Thus, current conduction paths are configured at both the ITO/ZnO heterojunction interface and the gate dielectric/ITO interface, resulting in higher on-state current of the ITO/ZnO heterojunction transistors than that of single-channel ITO or ZnO transistors.