发光二极管
光电子学
材料科学
宽禁带半导体
氮化镓
带宽(计算)
计算机科学
电信
纳米技术
图层(电子)
作者
Daniel Rogers,Haotian Xue,Fred Kish,B. Pezeshki,Alex Tselikov,Jonathan J. Wierer
标识
DOI:10.1364/ofc.2024.th3d.6
摘要
InGaN/GaN micro-light-emitting diodes with the highest bandwidths at very high temperatures (3.2 GHz at 290°C) are demonstrated. Differential carrier lifetime analysis is undertaken to understand recombination-related effects on the modulation response.
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