Two‐Step Cooling Strategy for Synergistic Control of CuZn and SnZn Defects Enabling 12.87% Efficiency (Ag,Cu)2ZnSn(S,Se)4 Solar Cells

材料科学 光电效应 光电子学 光伏系统 太阳能电池 开路电压 电压 纳米技术 化学工程 电气工程 工程类
作者
Hang Geng,Mengyang Wang,Songfan Wang,Dongxing Kou,Zhengji Zhou,Wenhui Zhou,Yafang Qi,Shengjie Yuan,Litao Han,Yuena Meng,Sixin Wu
出处
期刊:Advanced Functional Materials [Wiley]
卷期号:33 (3) 被引量:34
标识
DOI:10.1002/adfm.202210551
摘要

Abstract Abundant intrinsic defects and defect clusters in Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells lead to severe nonradiative recombination and limited photoelectric performance. Therefore, developing effective method to suppress the detrimental defects is the key to achieve high‐efficiency solar cell. Herein, a convenient two‐step cooling strategy in selenization process is reported to suppress the Cu Zn and Sn Zn defects and defect clusters synergistically. The results show that rapid cooling during section from selenization temperature to turning temperature can inhibit the volatilization of Sn and restrain the corresponding Sn‐related defects, while slow cooling during the subsequent temperature section can reduce the degree of Cu‐Zn disorder. Benefitting from the synergistic effect of two‐step cooling, a significantly lowered concentration of Sn Zn and Cu Zn defect and their defect clusters [2Cu Zn +Sn Zn ] in absorber is observed, meanwhile, a reduced band tailing effect and promoted carrier collection efficiency of the photovoltaic device is obtained. Finally, a device with improved open‐circuit voltage ( V oc ) of 505.5 mV and efficiency of 12.87% is achieved. This study demonstrates the impact of cooling process on defects controlling for the first time and provides a simple and effective new strategy for intrinsic defect control, which may be universal in other inorganic thin film solar cells.
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