神经形态工程学
材料科学
晶体管
纳米技术
光电子学
图层(电子)
电气工程
计算机科学
工程类
电压
人工神经网络
机器学习
作者
Xiangde Lin,Yonghai Li,Yanqiang Lei,Qijun Sun
标识
DOI:10.1080/19475411.2024.2306837
摘要
Electric double layer (EDL) gating is a technique in which ions in an electrolyte modulate the charge transport in an electronic material through electrical field effects. A sub-nanogap capacitor is induced at the interface of electrolyte/semiconductor under the external electrical field and the capacitor has an ultrahigh capacitance density (~µF cm−2). Recently, EDL gating technique, as an interfacial gating, is widely used in two-dimensional (2D) crystals for various sophisticated materials characterization and device applications. This review introduces the EDL-gated transistors based on 2D materials and their applications in the field of bioinspired optoelectronic detection, sensing, logic circuits, and neuromorphic computation.
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