材料科学
锡
电容器
退火(玻璃)
光电子学
铁电性
非易失性存储器
电极
随机存取存储器
电压
电子工程
电气工程
计算机科学
电介质
复合材料
冶金
计算机硬件
化学
物理化学
工程类
作者
Qin Wang,Shihao Yu,Yang Peng,Yefan Zhang,Haijun Liu,Hui Xu,Sen Liu,Qingjiang Li
出处
期刊:AIP Advances
[American Institute of Physics]
日期:2022-08-01
卷期号:12 (8)
被引量:2
摘要
The non-ideal characteristics at the interfaces of anti-ferroelectric (AFE) film and electrodes will greatly affect the potential performance in the way to embedded dynamic random-access memory applications. In this paper, we have proposed a high-performance AFE TiN/HfxZr1−xO2/TiN capacitor fabricated by fully atomic layer deposition grown and alcohol-thermal high-pressure annealing methods that have been employed to avoid exposure to the ambient atmosphere and cure the interface defects induced by the inevitable oxidization of electrodes. Due to the high improvement of the interface quality, the capacitors based on ultra-thin (∼6 nm) AFE film show competitive memory performances, such as low operating voltage (−0.6/1.8 V), high speed (10 ns), long retention time (103 s), and high endurance (1012). The final benchmark demonstrates that the proposed AFE TiN/HfxZr1−xO2/TiN capacitor is a promising candidate toward the next generation high-speed and high-density embedded memory.
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