Lead indium niobate-lead magnesium niobate-lead titanate based whispering gallery mode resonator

Whispering gallery mode resonators (WGMRs) have garnered significant interest due to their potential applications in the fields of electro-optic modulation and microwave to optical photon conversion. In this study, we have leveraged an electro-optic crystal, lead indium niobate-lead magnesium niobate-lead titanate (PIN-PMN-PT), to fabricate a high-quality WGMR. Our investigation revealed that the crystal composition used in this work is 0.24PIN-0.45PMN-0.31PT, and each element of the whole sample is homogeneously distributed. The dielectric properties of the sample revealed the necessity of limiting the temperature and external electric field frequency to below 100 °C and 106 Hz, respectively. The obtained optical quality factor value (Q value) of the resonator is ∼0.7 × 105. Impressively, our resonator could be conveniently tuned by exploiting the enormous inverse piezoelectric effect d31 of the crystal, thereby alleviating the need for precise fabrication. Furthermore, a theoretical analysis of our resonator revealed that a calculated resonance wavelength shift is within a broad range of 2.16 nm. Intriguingly, if the surface roughness of the resonator is reduced tenfold, we can increase the calculated Q value dependent on surface scattering by 104. Our finding showcases the tremendous potential of the PIN-PMN-PT crystal-based WGMR as versatile building blocks for a variety of applications in the burgeoning field of photonic technology.