Organic near‐infrared photodetectors with photoconductivity‐enhanced performance

光电导性 材料科学 光电子学 光电探测器 激子 活动层 载流子 飞秒 超快激光光谱学 吸收(声学) 三元运算 光谱学 光化学 化学 图层(电子) 纳米技术 光学 物理 激光器 量子力学 计算机科学 复合材料 程序设计语言 薄膜晶体管
作者
Siwei Zhang,Zhenlong Li,Jingzhou Li,Bingzhe Wang,Fang Chen,Xubiao Li,Shunjie Liu,Jacky W. Y. Lam,Guichuan Xing,Jiangyu Li,Zheng Zhao,Feiyu Kang,Guodan Wei,Ben Zhong Tang
出处
期刊:Aggregate [Wiley]
卷期号:4 (5) 被引量:5
标识
DOI:10.1002/agt2.345
摘要

Abstract Organic near‐infrared (NIR) photodetectors with essential applications in medical diagnostics, night vision, remote sensing, and optical communications have attracted intensive research interest. Compared with most conventional inorganic counterparts, organic semiconductors usually have higher absorption coefficients, and their thin active layer could be sufficient to absorb most incident light for effective photogeneration. However, due to the relatively poor charge mobility of organic materials, it remains challenging to inhibit the photogenerated exciton recombination and effectively extract carriers to their respective electrodes. Herein, this challenge was addressed by increasing matrix conductivities of a ternary active layer (D–A–D structure NIR absorber [2TT‐oC6B]:poly(N,N′‐bis‐4‐butylphenyl‐N,N′‐bisphenyl)benzidin [PolyTPD]:[6,6]‐phenyl‐C 61 ‐butyric acid methyl ester [PCBM] = 1:1:1) upon in situ incident light illumination, significantly accelerating charge transport through percolated interpenetrating paths. The greatly enhanced photoconductivity under illumination is intrinsically related to the unique donor–acceptor molecular structures of PolyTPD and 2TT‐oC6B, whereas stable intermolecular interaction has been verified by systematic molecular dynamics simulation. In addition, an ultrafast charge transfer time of 0.56 ps from the NIR aggregation‐induced luminogens of 2TT‐oC6B absorber to PolyTPD and PCBM measured by femtosecond transient absorption spectroscopy is beneficial for effective exciton dissociation. The solution‐processed organic NIR photodetector exhibits a fast response time of 83 μs and a linear dynamic range value of 111 dB under illumination of 830 nm. Therefore, our work has opened up a pioneering window to enhance photoconductivity through in situ photoirradiation and benefit NIR photodetectors as well as other optoelectronic devices.
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