色域
亮度
光电子学
有机发光二极管
材料科学
二极管
高颜色
光学
计算机科学
图层(电子)
物理
彩色图像
纳米技术
图像处理
人工智能
图像(数学)
作者
Seong Ji Lee,Chan‐mo Kang,Jinwook Shin,Dae Hyun Ahn,Chul Woong Joo,Hyunsu Cho,Nam Sung Cho,Hyoc Min Youn,Young Jae An,Jin Sun Kim,Jonghee Lee,Hyunkoo Lee
标识
DOI:10.1016/j.jiec.2021.09.014
摘要
Organic light-emitting diode (OLED) microdisplays have attracted considerable attention owing to their low power consumption, rapid response, high contrast ratio, and self-luminescence. To expand the use of OLED microdisplays, high luminance and vivid color are required. Herein, we developed a high-luminance, low-voltage, three-wavelength, top-emitting white OLED (WOLED) using a silicon substrate for complementary metal–oxide–semiconductor-based, full-color microdisplay applications. Optimal thickness of the emitting layer and thickness and position of the interlayer were determined to improve device performance. The device exhibited luminance of ∼4,200 cd/m2 at 3.3 V, and the maximum luminance reached 170,000 cd/m2 at 11.4 V. In addition, red, green, and blue color filters were deposited onto the WOLED after the thin-film encapsulation process to verify feasibility of the device for full-color microdisplay applications. The color gamut of the developed WOLED with color filters was 136% compared to sRGB. The maximum luminance and color gamut of the developed device is among the highest values obtained to date for OLED microdisplays.
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