纳米片
材料科学
晶体管
光电子学
电子迁移率
纳米技术
PMOS逻辑
柔性电子器件
场效应晶体管
电气工程
电压
工程类
作者
Sandeep Kumar Mondal,Uday Maitra,Jyoti Ranjan Pradhan,Subho Dasgupta
标识
DOI:10.1002/smtd.202100634
摘要
2D semiconductors, such as transition metal dichalcogenides (TMDs) show a rare combination of physical properties that include a large-enough bandgap to ensure sufficient current modulation in transistors, matching electron and hole mobility for complimentary logic operation, and sufficient mechanical flexibility of the nanosheets. Moreover, the solvent-exfoliated TMD-nanosheets may also be processed at low temperatures and onto a wide variety of substrates. However, the poor inter-flake transport in solution-cast 2D-TMD network transistors hinders the realization of high device mobility and current modulations that the intraflake transistors can regularly demonstrate. In this regard, fully printed and electrolyte-gated, narrow-channel MoS2 field-effect transistors (FETs) with simultaneous high current saturation (>310 µA µm-1 ) and on-off ratio (>106 ) are proposed here. The transport limitation is overcome by printing an additional metal layer onto the 2D-TMD nanosheet channel, which substantially shortens the effective channel lengths and results in predominant intraflake transport. In addition, a channel-capacitance-modulation induced subthermionic transport is recorded, which leads to a subthreshold slope value as low as 7.5 mV dec-1 . On the other hand, thermionic MOSFETs and fully printed depletion-mode NMOS inverters are also presented. The demonstrated generic approach involving chemically exfoliated nanosheet inks and the absolute device yield indicates the feasibility of fully printed 2D-TMD electronics.
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