快离子导体
单斜晶系
晶体结构
材料科学
热传导
X射线晶体学
Crystal(编程语言)
结晶学
离子
衍射
化学
电解质
物理化学
电极
物理
光学
复合材料
有机化学
计算机科学
程序设计语言
作者
Heinz Kohler,H. Schulz,O. K. Mel'Nikov
标识
DOI:10.1016/0025-5408(83)90158-7
摘要
The results of a single crystal X-ray structure determination of NASICON at 495K are presented. The crystal symmetry is rhombohedral at this temperature, but monoclinic at room temperature. The structure refinement yielded the following composition: Na/3.1/Zr/1.78/Si/1.24/P/1.76/0/12/. This compound with NASICON structure is not located on the NASICON section given in the literature and this leads us to propose a new compositional plane. The conduction path involves both sodium sites and could be unambiguously derived from the joint probability density (PDF) of the Na ions. The potential barrier calculated from the PDF has about the same value as the activation energies measured on NASICON ceramics above the phase transition. These results are compared with similar studies on a pure Si NASICON crystal at temperatures up to 933K where the same conduction mechanism is found.
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