转印
材料科学
光电子学
聚二甲基硅氧烷
发光二极管
氮化镓
二极管
薄膜
纳米尺度
纳米技术
图层(电子)
复合材料
作者
António José Trindade,Benoit Guilhabert,D. Massoubre,Dandan Zhu,N. Laurand,Erdan Gu,I. M. Watson,C. J. Humphreys,Martin D. Dawson
摘要
The transfer printing of 2 μm-thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150 nm (±14 nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a representative 16 × 16 array format using a modified dip-pen nano-patterning system. Devices in the array were positioned using a pre-calculated set of coordinates to demonstrate an automated transfer printing process. Individual printed array elements showed blue emission centered at 486 nm with a forward-directed optical output power up to 80 μW (355 mW/cm2) when operated at a current density of 20 A/cm2.
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