纳米晶
材料科学
量子点
光电子学
电致发光
发光二极管
单层
二极管
氧化铟锡
壳体(结构)
量子效率
铟
阳极
纳米技术
图层(电子)
复合材料
电极
化学
物理化学
作者
Bhola N. Pal,Yagnaseni Ghosh,Sergio Brovelli,Rawiwan Laocharoensuk,Victor I. Klimov,Jennifer A. Hollingsworth,Han Htoon
出处
期刊:Nano Letters
[American Chemical Society]
日期:2011-12-12
卷期号:12 (1): 331-336
被引量:390
摘要
We use a simple device architecture based on a poly(3,4-ethylendioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)-coated indium tin oxide anode and a LiF/Al cathode to assess the effects of shell thickness on the properties of light-emitting diodes (LEDs) comprising CdSe/CdS core/shell nanocrystal quantum dots (NQDs) as the emitting layer. Specifically, we are interested in determining whether LEDs based on thick-shell nanocrystals, so-called "giant" NQDs, afford enhanced performance compared to their counterparts incorporating thin-shell systems. We observe significant improvements in device performance as a function of increasing shell thickness. While the turn-on voltage remains approximately constant for all shell thicknesses (from 4 to 16 CdS monolayers), external quantum efficiency and maximum luminance are found to be about one order of magnitude higher for thicker shell nanocrystals (≥13 CdS monolayers) compared to thinner shell structures (<9 CdS monolayers). The thickest-shell nanocrystals (16 monolayers of CdS) afforded an external quantum efficiency and luminance of 0.17% and 2000 Cd/m2, respectively, with a remarkably low turn-on voltage of ∼3.0 V.
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