绝缘栅双极晶体管
萃取(化学)
双极结晶体管
材料科学
电流注入技术
电压
电气工程
结温
计算机科学
电子工程
功率(物理)
工程类
色谱法
化学
作者
R. Withanage,N.Y.A. Shammas,S. Tennakoorr,Colin Oates,Will Crookes
出处
期刊:International Universities Power Engineering Conference
日期:2006-09-01
被引量:18
标识
DOI:10.1109/upec.2006.367551
摘要
The insulated gate bipolar transistor (IGBT) is now widely used in many power electronics circuits. An accurate IGBT model is very important and useful to simulate these power electronics circuits to foresee the circuit behaviour and device behaviour before its implementation. Hefner IGBT model is one of the very good IGBT analytical models available for circuit simulation. This model requires IGBT parameters and those can be extracted experimentally. Two experiment set ups are needed and few different tests have to be carried out to extract IGBT parameters required for the Hefner model. In this paper, work carried out to extract eleven different parameters of 3.3 kV/1200 A IGBT is explained for the Hefner model
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