压电响应力显微镜
电容器
材料科学
锆钛酸铅
铁电性
相界
薄膜电容器
凝聚态物理
压电
光电子学
薄膜
滤波电容器
相(物质)
纳米技术
复合材料
电介质
电气工程
电压
物理
工程类
量子力学
作者
V. Nagarajan,Andrei Stanishevsky,Le Chen,Tianqi Zhao,B.-T. Liu,J. Melngailis,A. L. Roytburd,R. Ramesh,J. Finder,Zhiyi Yu,R. Droopad,K. Eisenbeiser
摘要
We report on the out-of-plane piezoelectric response (d33), measured via piezoresponse scanning force microscopy, of submicron capacitors fabricated from epitaxial PbZrxTi1−xO3 thin films. Investigations on 1 μm2 and smaller capacitors show that the substrate-induced constraint is dramatically reduced by nanostructuring. At zero field, the experimentally measured values of d33 for clamped as well as submicron capacitors are in good agreement with the predictions from thermodynamic theory. The theory also describes very well the field dependence of the piezoresponse of clamped capacitors of key compositions on the tetragonal side of the PbZrxTi1−xO3 phase diagram as well as the behavior of submicron PbZr0.2Ti0.8O3 (hard ferroelectric) capacitors. However, the field-dependent piezoresponse of submicron capacitors in compositions closer to the morphotropic phase boundary (soft ferroelectrics) is different from the behavior predicted by the theoretical calculations.
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