Electrodeposition of Zinc Oxide Nanowires as a Counter Electrode in Electrochromic Devices

Electro deposited ZnO NW for charge storage layer of the electro chromic device. Figure S1. SEM images of ZnO NWs structure on ITO/glass substrate at different concentration of KCl. (a) 0.1 M, (b) 1.0 M, and (c) 2 M KCl with 1 mM ZnCl2 at 25°C, 250 s. Figure S2. SEM images of ZnO NWs structure on ITO/glass substrate at different temperature. (a) 25°C, (b) 40°C, (c) 50°C, and (d) 70°C. The condition of electrodeposition is 5 mM ZnCl2 and 0.1 M KCl with O2 bubbling at 70°C for 1000 s. The scale bar is 5 μm. Figure S3. SEM images of PB thin films electrodeposition at 40 μA for 140 s obtained from (a) top-view and (b) cross-sectional view. Figure S4. Cyclic voltammetry of PB thin film at a scan rate of 20 mV/s (Ag/AgCl: reference electrode, Pt: counter electrode, and PB thin film: working electrode), (inserted image: coloration/bleaching state of PB thin film). Figure S5. Photograph of the ECD with a two-electrode system. (PB thin film: working electrode and ZnO NWs thin film: counter electrode). Figure S6. (a) Optical transmittance as a function of operation cycles at 700 nm and (b) plot of the transmittance of the ECDs versus number of cycles. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.