Transient behaviours of yellow and blue luminescence bands in unintentionally doped GaN

Yellow Luminescence (YL) band and blue luminescence (BL) band in a studied unintentionally doped GaN sample show a transient behaviour where the observed luminescence intensities change with the exposure time of the sample under 325 nm laser beam excitation at 10–300 K. Such an intensity variation is accompanied with a red-shift for YL peak at 10–140 K and one for BL peak at 140 K. We propose that such behaviours are related to the chemical transformations of YL-related C N and C N O N defects, and BL-related C N -H i and C N O N -H i defects during the exposure.